Annealing effects on structural and photovoltaic properties of the dip-SILAR-prepared bismuth oxyhalides (BiOI, Bi7O9I3, Bi5O7I) films

Abstract Bismuth oxyhalides are becoming a promising contender for photovoltaic applications due to its non-toxic nature and decent optical properties. This study mainly deals with clarifying the effects of phase transformations on structure, optical, electrical properties BiOI thin film prepared via dip-successive ionic layer adsorption reaction (SILAR) method at different annealing temperatures ranging from 100 400 °C. Therefore, significant (i.e., existence Bi 7 O 9 I 3 5 have been confirmed 300 °C °C, respectively) appeared in produced films, which were change temperatures. The experimental results that films achieved maximum current density efficiency minimum respectively. Experimental also showed increasing temperature indirect bandgap risen 1.77 2.96 eV while crystallite size decreased 17.62 12.99 nm. energy band diagram electrolyte explained observed poor during transformation. Hence, this result will add positive impacts new information findings dip-SILAR-prepared cells.